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The XAS is a bending magnet based beamline dedicated to spectroscopy in the soft X-ray energy range. The beamline is designed to study chemical and electronic, structural and magnetic properties by means of XAS, XNLD (X-ray natural linear dichroism) and XMCD (X-ray magnetic circular dichroism), XMLD (X-ray magnetic linear dichroism), respectively. It is suitable for probing element specific properties of surfaces, interfaces, thin films and nanomaterials. The available photon energy range (100–2000 eV) covers the absorption K edges for light elements, from carbon to silicon, L edges of elements with Z between 20 and 40, including 3d elements, and also M edges of many heavier atoms, including 4f elements.

The offered experimental station is:

  • a universal station for X-ray absorption spectroscopy (XAS).

End station is available for user’s experiments in different sample environments and focusing conditions. In order to prepare for their experiment, users are asked to look at the end station webpage.


The XAS beamline can be used in material sciences, physics, chemistry, geosciences and biosciences.

Please do not hesitate to contact the beamline team to discuss if your experiments are technically feasible before submission of the proposal application.

The beamline is co-operated by the Jagiellonian University, the Jerzy Haber Institute of Catalysis and Surface Chemistry of the Polish Academy of Sciences, and the AGH University of Science and Technology in Kraków. The relevant agreement was signed on March 2, 2016 (event nformation).

The Jerzy Haber Institute and AGH invite users who have been granted beam time to cooperate: 

Beamline parameters:


Bending magnet (1.31 T)

Available (optimal) energy range

100–2000 eV (300–1600 eV)

Energy resolution ΔE/E

Not worse than 2.5 x 10-4

Beam size at sample (H x V)

250 μm x 40 μm

Photon flux at sample

109-1010 [ph/s/0.1 A]


Linear (horizontal) and elliptical

End station: X-ray absorption spectroscopy chamber

The XAS, XMCD, XMLD for total electron yield (TEY) measurements in applied field (140 mT) and variable sample temperature (20-670 K). The partial electron yield detection mode is available for low conductive samples using electron multiplier (channeltron) and fluorescent detector (silicon drift detector type).